BFE520 Datasheet, PDF (5/8 Pages) NXP Semiconductors – NPN wideband differential transistor

Philips Semiconductors
NPN wideband differential transistor
Product specification
BFE520
APPLICATION INFORMATION
SPICE parameters for any single BFE520 die
SEQUENCE No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19⁽¹⁾
20⁽¹⁾
21⁽¹⁾
22
23
24
25
26
27
28
29
30
31
32
33
34
35⁽¹⁾
36⁽¹⁾
37⁽¹⁾
38
PARAMETER
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
VALUE UNIT
1.016 fA
220.1 −
1.000 −
48.06 V
510.0 mA
283.0 fA
2.035 −
100.7 −
0.988 −
1.692 V
2.352 mA
24.48 aA
1.022 −
10.00 Ω
1.000 µA
10.00 Ω
775.3 mΩ
2.210 Ω
0.000 −
1.110 eV
3.000 −
1.245 pF
600.0 mV
0.258 −
8.616 ps
6.788 −
1.414 V
110.3 mA
45.01 deg
447.6 fF
189.2 mV
0.071 −
0.130 −
543.7 ps
0.000 F
750.0 mV
0.000 −
0.780 −
Note
1. These parameters have not been extracted, the
default values are shown.
handbook, halfpage
C1
LP
C2
LP
B1
LB
T1
T2
B2
LB
LE
LE
LP
MBG190
E
Fig.2 Package equivalent circuit SOT353B
(inductance only).
Lead inductances (nH)
LP
0.4
LB
0.8
LE
0.6
E 35
B2 3.5 35
C2 2 35 36
C1 36 35 2 15
B1
E
B2 C2
MBG191
Fig.3 Package capacitance (fF) between
indicated nodes.
1996 Oct 08
5