BFE520 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN wideband differential transistor

Philips Semiconductors
NPN wideband differential transistor
Product specification
BFE520
FEATURES
• Small size
• High power gain at low bias current and voltage
• Temperature matched
• Balanced configuration
• h_FE matched
• Continues to operate at V_CE < 1 V.
PINNING - SOT353B
PIN
SYMBOL
DESCRIPTION
b₁
1
base 1
e
2
emitter
b₂
3
base 2
c₂
4
collector 2
c₁
5
collector 1
APPLICATIONS
• Single balanced mixers
• Balanced amplifiers
• Balanced oscillators.
DESCRIPTION
Emitter coupled dual NPN silicon RF transistor in a surface
mount 5-pin SOT353 (S-mini) package. The transistor is
primarily intended for applications in the RF front end as a
balanced mixer, a differential amplifier in analog and digital
cellular phones, and in cordless phones, pagers and
satellite TV-tuners.
321
handbook, halfpage
4
5
Top view
c1
c2
b1
b2
e
MAM211
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Any single transistor
C_re
feedback capacitance C_BC
MSG/G_max maximum power gain
F
noise figure
h_FE
R_{th j-s}
DC current gain
thermal resistance from
junction to soldering point
CONDITIONS
I_e = 0; V_CB = 3 V; f = 1 MHz
I_C = 20 mA; V_CE = 3 V; f = 900 MHz
I_C = 20 mA; V_CE = 3 V; f = 2 GHz
I_C = 5 mA; V_CE = 3 V; f = 900 MHz;
Γ_S = Γ_opt
I_C = 5 mA; V_CE = 3 V; f = 2 GHz;
Γ_S = Γ_opt
I_C = 20 mA; V_CE = 3 V
single loaded
double loaded
MIN. TYP. MAX. UNIT
−
0.35 0.4 pF
−
16
−
dB
−
9
−
dB
−
1.1 1.6 dB
−
1.9 −
dB
60
120 250
−
−
230 K/W
−
−
115 K/W
1996 Oct 08
2