BFE520 Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN wideband differential transistor

Philips Semiconductors
NPN wideband differential transistor
Product specification
BFE520
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
DC characteristics of any single transistor
V_(BR)CBO collector-base breakdown voltage I_C = 2.5 µA; I_E = 0
20
V_(BR)CEO collector-emitter breakdown voltage I_C = 10 µA; I_B = 0
8
V_(BR)EBO emitter-base breakdown voltage I_E = 2.5 µA; I_C = 0
2.5
I_CBO
collector-base leakage current
I_E = 0; V_CB = 6 V
−
h_FE
DC current gain
I_C = 20 mA; V_CE = 6 V
60
DC characteristics of the dual transistor
∆h_FE
∆V_BEO
ratio of highest and lowest DC
current gain
difference between highest and
lowest base-emitter voltage
(offset voltage)
I_C1 = I_C2 = 20 mA;
1
V_CE1 = V_CE2 = 6 V
I_E1 = I_E2 = 30 mA; T_amb = 25 °C 0
−
−
V
−
−
V
−
−
V
−
50
nA
120 250
1.2 −
1
−
mV
AC characteristics of any single transistor
f_T
transition frequency
C_c
C_re
MSG/G_max
collector capacitance
feedback capacitance
maximum power gain; note 1
s₂₁ ²
F
insertion power gain
noise figure
I_C = 20 mA; V_CE = 3 V;
−
f = 1 GHz
I_E = i_e = 0; V_CB = 3 V; f = 1 MHz −
I_C = 0; V_CB = 3 V; f = 1 MHz
−
I_C = 20 mA; V_CE = 3 V;
−
f = 900 MHz; T_amb = 25 °C
I_C = 20 mA; V_CE = 3 V;
−
f = 2 GHz; T_amb = 25 °C
I_C = 20 mA; V_CE = 3 V;
13
f = 900 MHz; T_amb = 25 °C
I_C = 5 mA; V_CE = 3 V;
−
f = 900 MHz; Γ_S = Γ_opt
I_C = 5 mA; V_CE = 3 V;
−
f = 2 GHz; Γ_S = Γ_opt
9
−
GHz
0.4 0.45 pF
0.35 0.4 pF
16
−
dB
9
−
dB
14
−
dB
1.1 1.6 dB
1.9 −
dB
Note
1. Maximum gain of the differential amplifier is higher because of internal emitter connection (see Fig.2).
1996 Oct 08
4