BCM62B_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – PNP/PNP matched double transistor

NXP Semiconductors
BCM62B
PNP/PNP matched double transistor
Table 7. Characteristics …continued
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor TR2
V_EBS
emitter-base voltage
Per device
V_CB = 0 V;
I_E = 250 mA
V_CB = 0 V;
I_E = 10 µA
I_C1/I_E2
current matching
V_CE1 = −5 V;
I_E2 = 0.5 mA;
T_amb ≤ 25 °C
V_CE1 = −5 V;
I_E2 = 0.5 mA;
T_amb ≤ 150 °C
V_CE1 = −3 V;
I_E2 = 0.5 mA;
T_amb ≤ 25 °C
V_CE1 = −1 V;
I_E2 = 0.5 mA;
T_amb ≤ 25 °C
Min Typ Max
-
-
1.5
400 -
-
[3] ₁
1.1
1.2
[3] _{1.02 -}
1.22
[3] _{0.95 1.05 1.15}
[3] _0.9
1
1.1
[1] V_BEsat decreases by about 1.7 mV/K with increasing temperature.
[2] V_BE decreases by about 2 mV/K with increasing temperature.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
V
mV
BCM62B_2
Product data sheet
Rev. 02 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
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