BCM62B_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – PNP/PNP matched double transistor

NXP Semiconductors
BCM62B
PNP/PNP matched double transistor
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor TR1
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
V_BE
C_c
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
base-emitter voltage
collector capacitance
V_CB = −30 V;
I_E = 0 A
V_CB = −30 V;
I_E = 0 A;
T_j = 150 °C
V_EB = −5 V;
I_C = 0 A
V_CE = −5 V;
I_C = −10 µA
V_CE = −5 V;
I_C = −100 µA
V_CE = −5 V;
I_C = −2 mA
I_C = −10 mA;
I_B = −0.5 mA
I_C = −100 mA;
I_B = −5 mA
I_C = −10 mA;
I_B = −0.5 mA
I_C = −100 mA;
I_B = −5 mA
V_CE = −5 V;
I_C = −2 mA
V_CE = −5 V;
I_C = −10 mA
V_CB = −10 V;
I_E = i_e = 0 A;
f = 1 MHz
C_e
emitter capacitance V_EB = −0.5 V;
I_C = i_c = 0 A;
f = 1 MHz
f_T
transition frequency V_CE = −5 V;
I_C = −10 mA;
f = 100 MHz
NF
noise figure
V_CE = −5 V;
I_C = −0.2 mA;
R_S = 2 kΩ;
f = 10 Hz to
15.7 kHz
V_CE = −5 V;
I_C = −0.2 mA;
R_S = 2 kΩ;
f = 1 kHz;
B = 200 Hz
BCM62B_2
Product data sheet
Rev. 02 — 28 August 2009
Min Typ Max Unit
-
-
−15 nA
-
-
−5
µA
-
-
−100 nA
-
250 -
100 -
-
200 290 450
-
−50 −200 mV
-
−200 −400 mV
[1] _-
−760 -
mV
[1] _-
−920 -
mV
[2] _{−600 −650 −700 mV}
[2] _-
-
−760 mV
-
-
2.2 pF
-
10
-
pF
100 175 -
MHz
-
1.6
-
dB
-
3.1
-
dB
© NXP B.V. 2009. All rights reserved.
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