BCM62B_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – PNP/PNP matched double transistor

NXP Semiconductors
BCM62B
PNP/PNP matched double transistor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor TR1
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage
open base
-
Per transistor
V_EBS
emitter-base voltage
V_CB = 0 V
-
I_C
collector current
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
P_tot
total power dissipation
T_amb ≤ 25 °C
[1] _-
Per device
P_tot
T_j
T_amb
T_stg
total power dissipation
junction temperature
ambient temperature
storage temperature
T_amb ≤ 25 °C
[1] _-
-
−65
−65
Max
−50
−45
−5
−100
−200
220
390
150
+150
+150
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
V
V
V
mA
mA
mW
mW
°C
°C
°C
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Conditions
Per transistor
R_th(j-a)
thermal resistance from in free air
junction to ambient
Per device
R_th(j-a)
thermal resistance from in free air
junction to ambient
Min
Typ
Max
[1] _-
-
568
[1] _-
-
321
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
K/W
BCM62B_2
Product data sheet
Rev. 02 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
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