BC857BV Datasheet, PDF (5/8 Pages) NXP Semiconductors – PNP general purpose double transistor

Philips Semiconductors
PNP general purpose double transistor
Product specification
BC857BV
Graphical information BC857BV
1000
handbook, halfpage
hFE
800
MHB975
600
(1)
400
(2)
200
(3)
0
−10^−2 −10^−1
1
10
10²
10³
IC (mA)
V_CE = −5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
Fig.2 DC current gain; typical values.
−1200
hand_Vb_Boo_Ek, halfpage
(mV)
−1000
MHB976
−800
(1)
−600
(2)
−400
(3)
−200
−−010_{−2 −10−1}
−1
V_CE = −5 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
−10
−10²
−10³
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
−10⁴
handbook, halfpage
VCEsat
(mV)
−10³
MHB977
−10²
(1)
−1_−010_−1
(2)
(3)
−1
−10
−10²
−10³
IC (mA)
I_C/I_B = 20.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−1200
han_Vd_Bb_Eoo_sk_a, _thalfpage
(mV)
−1000
(1)
−800
(2)
−600
(3)
−400
MHB978
−200
−^010−1
−1
−10
−10²
−10³
IC (mA)
I_C/I_B 20.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07
5