BC857BV Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP general purpose double transistor

Philips Semiconductors
PNP general purpose double transistor
Product specification
BC857BV
FEATURES
PINNING
• 300 mW total power dissipation
• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin
package
• Excellent coplanarity due to straight leads
• Improved thermal behaviour due to flat leads
• Reduces number of components as replacement of two
SC-75/SC-89 packaged BISS transistors
• Reduces required board space
• Reduces pick and place costs.
PIN
DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base
TR1; TR2
6, 3 collector TR1; TR2
6
5
4
65 4
APPLICATIONS
• General purpose switching and amplification.
TR2
TR1
DESCRIPTION
PNP double transistor in a SOT666 plastic package.
NPN complement: BC847BV.
1
2
3
Top view
MAM450
123
MARKING
TYPE NUMBER
BC857BV
MARKING CODE
3F
Fig.1 Simplified outline (SOT666) and symbol.
2001 Nov 07
2