BC857BV Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP general purpose double transistor

Philips Semiconductors
PNP general purpose double transistor
Product specification
BC857BV
CHARACTERISTICS
T_amb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per transistor
I_CBO
I_EBO
h_FE
V_BE
V_CEsat
V_BEsat
C_c
C_e
f_T
collector-base cut-off current
I_E = 0; V_CB = −30 V
emitter-base cut-off current
DC current gain
I_E = 0; V_CB = −30 V; T_j = 150 °C
I_C = 0; V_EB = −5 V
I_C = −2 mA; V_CE = −5 V
base-emitter voltage
I_C = −2 mA; V_CE = −5 V
collector-emitter saturation voltage I_C = −10 mA; I_B = −0.5 mA
I_C = −100 mA; I_B = −5. mA; note 1
base-emitter saturation voltage
collector capacitance
emitter capacitance
I_C = −10 mA; I_B = −0.5 mA
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
I_C = i_c = 0; V_EB = −500 mV;
f = 1 MHz
transition frequency
I_C = −10 mA; V_CE = −5 V;
f = 100 MHz
MIN.
−
−
−
200
−600
−
−
−
−
−
100
TYP.
−
−
−
−
−655
−
−
−755
−
10
−
MAX. UNIT
−15 nA
−5
µA
−100 nA
450
−750 mV
−100 mV
−400 mV
−
mV
2.2 pF
−
pF
−
MHz
Note
1. Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
2001 Nov 07
4