BAV10 Datasheet, PDF (5/7 Pages) NXP Semiconductors – High-speed diode

Philips Semiconductors
High-speed diode
Product specification
BAV10
10³
handbook, halfpage
IR
(µA)
10²
10
MGD011
(1) (2)
(3)
1
10^−1
10^−2
0
100
Tj (^oC)
200
(1) V_R = 60 V; maximum values.
(2) V_R = 60 V; typical values.
(3) V_R = 30 V; typical values.
Fig.5 Reverse current as a function of junction
temperature.
4
handbook, halfpage
Cd
(pF)
3
2
1
0
0
10
MGD002
20
30
VR (V)
f = 1 MHz; T_j = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 16
5