BAV10 Datasheet, PDF (2/7 Pages) NXP Semiconductors – High-speed diode

Philips Semiconductors
High-speed diode
Product specification
BAV10
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
• High switching speed: max. 6 ns
• General application
• Continuous reverse voltage:
max. 60 V
• Repetitive peak reverse voltage:
max. 60 V
• Repetitive peak forward current:
max. 600 mA.
APPLICATIONS
• High-speed switching.
DESCRIPTION
The BAV10 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
handbook, halfpagke
a
MAM246
The diode is type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_RRM
V_R
I_F
I_FRM
I_FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
CONDITIONS
see Fig.2; note 1
square wave; T_j = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 100 µs
t=1s
T_amb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
MIN.
−
−
−
−
MAX.
60
60
300
600
UNIT
V
V
mA
mA
−
9A
−
3A
−
1A
−
350 mW
−65
+200 °C
−
200 °C
1996 Sep 16
2