BAV10 Datasheet, PDF (3/7 Pages) NXP Semiconductors – High-speed diode

Philips Semiconductors
High-speed diode
Product specification
BAV10
ELECTRICAL CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
C_d
diode capacitance
t_rr
reverse recovery time
V_fr
forward recovery voltage
CONDITIONS
see Fig.3
I_F = 10 mA
I_F = 200 mA
I_F = 500 mA
I_F = 200 mA; T_j = 100 °C
see Fig.5
V_R = 60 V
V_R = 60 V; T_j = 150 °C
f = 1 MHz; V_R = 0; see Fig.6
when switched from I_F = 400 mA to
I_R = 400 mA; R_L = 100 Ω;
measured at I_R = 40 mA; see Fig.7
when switched from I_F = 400 mA;
t_r = 30 ns; see Fig.8
when switched from I_F = 400 mA;
t_r = 10 ns; see Fig.8
MIN.
−
−
−
−
−
−
−
−
−
−
MAX. UNIT
750 mV
1.0 V
1.25 V
950 mV
100 nA
100 µA
2.5 pF
6 ns
2V
1.5 V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length 10 mm; note 1
Note
1. Device mounted on a printed circuit-board without metallization pad.
VALUE
240
500
UNIT
K/W
K/W
1996 Sep 16
3