BAS45AL Datasheet, PDF (5/8 Pages) NXP Semiconductors – Low-leakage diode

Philips Semiconductors
Low-leakage diode
Product specification
BAS45AL
handboo¹k,⁰h⁴alfpage
IR
(nA)
10 ³
10 ²
10
1
10 ¹
0
50
MBD456
max
typ
100 _{T j (oC)} 150
V_R = 125 V.
Fig.5 Reverse current as a function of junction
temperature.
3
handbook, halfpage
Cd
(pF)
2
MBG524
1
0
0
5
10
15 _{VR (V)} 20
f = 1 MHz; T_j = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
RS = 50 Ω
V = VR IF x R _S
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
R _i = 50 Ω
VR
MGA881
tr
tp
10%
90%
input signal
t
IF
t _rr
t
(1)
output signal
1999 May 28
Fig.7 Reverse recovery time test circuit and waveforms.
5