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BAS45AL Datasheet, PDF (3/8 Pages) NXP Semiconductors – Low-leakage diode
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Philips Semiconductors
Low-leakage diode
Product specification
BAS45AL
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
trr
reverse recovery time
CONDITIONS
TYP.
see Fig.3
IF = 1 mA
−
IF = 10 mA
−
IF = 100 mA
−
see Fig.5
VR = 125 V; Emax = 100 lx
−
VR = 30 V; Tj = 125 °C; Emax = 100 lx −
VR = 125 V; Tj = 125 °C; Emax = 100 lx −
VR = 125 V; Tj = 150 °C; Emax = 100 lx −
f = 1 MHz; VR = 0; see Fig.6
−
when switched from IF = 10 mA to
1.5
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
MAX. UNIT
780
mV
860
mV
1000 mV
1
nA
300
nA
500
nA
2
µA
4
pF
−
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Note
1. Device mounted on a FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
300
375
UNIT
K/W
K/W
1999 May 28
3
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