BAS45AL Datasheet, PDF (2/8 Pages) NXP Semiconductors – Low-leakage diode

Philips Semiconductors
Low-leakage diode
Product specification
BAS45AL
FEATURES
• Continuous reverse voltage:
max. 125 V
• Repetitive peak forward current:
max. 625 mA
• Low reverse current: max. 1 nA
• Switching time: typ. 1.5 µs.
DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in a small
SOD80C glass SMD package.
handbook, 4 columns
k
a
APPLICATION
• Low leakage current applications.
MAM061
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_RRM
V_R
I_F
I_FRM
I_FSM
P_tot
T_stg
T_j
PARAMETER
CONDITIONS
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
note 1; see Fig.2
repetitive peak forward current
non-repetitive peak forward current square wave; T_j = 25 °C prior to
surge; see Fig.4
total power dissipation
storage temperature
t_p = 1 µs
t_p = 1 ms
t_p = 1 s
T_amb = 25 °C; note 1
junction temperature
Note
1. Device mounted on a FR4 printed-circuit board.
MIN.
−
−
−
−
MAX.
125
125
250
625
UNIT
V
V
mA
mA
−
4
A
−
1
A
−
0.5
A
−
400
mW
−65
+175 °C
−
175
°C
1999 May 28
2