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74HC_HCT2G125_15 Datasheet, PDF (5/15 Pages) NXP Semiconductors – Dual buffer/line driver; 3-state
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NXP Semiconductors
74HC2G125; 74HCT2G125
Dual buffer/line driver; 3-state
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 C.
Symbol Parameter
Conditions
Tamb = 40 C to +85 C Tamb = 40 C to +125 C Unit
Min Typ Max
Min
Max
ICC
supply current VI = VCC or GND; IO = 0 A;
-
-
10
-
VCC = 6.0 V
CI
input capacitance
-
1.0
-
-
CO
output
capacitance
-
1.5
-
-
20
A
-
pF
-
pF
74HCT2G125
VIH
HIGH-level input VCC = 4.5 V to 5.5 V
voltage
2.0 1.6
-
2.0
-
V
VIL
LOW-level input VCC = 4.5 V to 5.5 V
voltage
-
1.2 0.8
-
0.8
V
VOH
HIGH-level
VI = VIH or VIL; VCC = 4.5 V
output voltage
IO = 20 A
4.4 4.5
-
4.4
IO = 6.0 mA
3.84 4.32
-
3.7
VOL
LOW-level output VI = VIH or VIL; VCC = 4.5 V
voltage
IO = 20 A
-
0
0.1
-
IO = 6.0 mA
-
0.16 0.33
-
II
input leakage
VI = VCC or GND; VCC = 5.5 V
-
-
1.0
-
current
-
V
-
V
0.1
V
0.4
V
1.0 A
IOZ
OFF-state output VI = VIH or VIL;
-
-
5.0
-
current
VO = VCC or GND; VCC = 5.5 V
ICC
supply current VI = VCC or GND; IO = 0 A;
-
-
10
-
VCC = 5.5 V
ICC
additional supply per input; VCC = 4.5 V to 5.5 V; -
-
375
-
current
VI = VCC  2.1 V; IO = 0 A
CI
input capacitance
-
1.0
-
-
CO
output
capacitance
-
1.5
-
-
10
A
20
A
410
A
-
pF
-
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit see Figure 8.
Symbol Parameter Conditions
Tamb = 40 C to +85 C Tamb = 40 C to +125 C Unit
Min Typ[1] Max
Min
Max
74HC2G125
tpd
propagation nA to nY; see Figure 6
delay
VCC = 2.0 V
[2]
-
35
115
-
135
ns
VCC = 4.5 V
-
11
23
-
27
ns
VCC = 5.0 V; CL = 15 pF
VCC = 6.0 V
-
10
-
-
-
8
20
-
-
ns
23
ns
74HC_HCT2G125
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 17 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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