74HC1G08 Datasheet, PDF (5/16 Pages) NXP Semiconductors – 2-input AND gate

Philips Semiconductors
2-input AND gate
Product specification
74HC1G08; 74HCT1G08
DC CHARACTERISTICS
Family 74HC1G
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
T_amb (°C)
SYMBOL
PARAMETER
OTHER
−40 to +85
V_CC (V) _{MIN. TYP.(1) MAX.}
−40 to +125
MIN. MAX.
V_IH
HIGH-level input voltage
2.0
1.5
1.2
−
4.5
3.15 2.4
−
6.0
4.2
3.2
−
1.5
−
3.15 −
4.2
−
V_IL
LOW-level input voltage
2.0
−
0.8
0.5
−
0.5
4.5
−
2.1
1.35 −
1.35
6.0
−
2.8
1.8
−
1.8
V_OH
HIGH-level output
voltage
V_I = V_IH or V_IL; 2.0
1.9
2.0
−
I_O = −20 µA
1.9
−
V_I = V_IH or V_IL; 4.5
4.4
4.5
−
I_O = −20 µA
4.4
−
V_I = V_IH or V_IL; 6.0
5.9
6.0
−
I_O = −20 µA
5.9
−
V_I = V_IH or V_IL; 4.5
I_O = −2.0 mA
4.13 4.32 −
3.7
−
V_I = V_IH or V_IL; 6.0
I_O = −2.6 mA
5.63 5.81 −
5.2
−
V_OL
LOW-level output
voltage
V_I = V_IH or V_IL; 2.0
−
0
0.1
−
0.1
I_O = 20 µA
V_I = V_IH or V_IL; 4.5
−
0
0.1
−
0.1
I_O = 20 µA
V_I = V_IH or V_IL; 6.0
−
0
0.1
−
0.1
I_O = 20 µA
V_I = V_IH or V_IL; 4.5
−
0.15 0.33 −
0.4
I_O = 2.0 mA
V_I = V_IH or V_IL; 6.0
−
0.16 0.33 −
0.4
I_O = 2.6 mA
I_LI
input leakage current V_I = V_CC or GND 6.0
−
−
1.0
−
1.0
I_CC
quiescent supply
current
V_I = V_CC or GND; 6.0
−
−
10
−
20
I_O = 0
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
Note
1. All typical values are measured at T_amb = 25 °C.
2002 May 17
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