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74HC1G08 Datasheet, PDF (4/16 Pages) NXP Semiconductors – 2-input AND gate
Philips Semiconductors
2-input AND gate
Product specification
74HC1G08; 74HCT1G08
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
CONDITIONS
VCC
VI
VO
Tamb
tr, tf
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall times
see DC and AC
characteristics per
device
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
74HC1G04
74HCT1G04
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
2.0 5.0 6.0 4.5 5.0 5.5 V
0
−
VCC 0
−
VCC V
0
−
VCC 0
−
VCC V
−40 +25 +125 −40 +25 +125 °C
−
−
1000 −
−
−
ns
−
−
500 −
−
500 ns
−
−
400 −
−
−
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
VCC
supply voltage
IIK
input diode current
IOK
output diode current
IO
output source or sink current
ICC
VCC or GND current
Tstg
storage temperature
PD
power dissipation per package
CONDITIONS
VI < −0.5 V or VI > VCC + 0.5 V; note 1
VO < −0.5 V or VO > VCC + 0.5 V; note 1
−0.5 V < VO < VCC + 0.5 V; note 1
note 1
for temperature range from −40 to +125 °C;
note 2
MIN.
−0.5
−
−
−
−
−65
−
MAX. UNIT
+7.0 V
±20 mA
±20 mA
±12.5 mA
±25 mA
+150 °C
200 mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55 °C the value of PD derates linearly with 2.5 mW/K.
2002 May 17
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