2N3866 Datasheet, PDF (5/9 Pages) NXP Semiconductors – Silicon planar epitaxial overlay transistors

Philips Semiconductors
Silicon planar epitaxial
overlay transistors
Product specification
2N3866; 2N4427
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CBO
V_(BR)CEO
V_(BR)CER
V_(BR)EBO
V_CEsat
I_CEO
h_FE
f_T
C_c
collector-base breakdown voltage
2N3866
2N4427
collector-emitter breakdown voltage
2N3866
2N4427
collector-emitter breakdown voltage
2N3866
2N4427
emitter-base breakdown voltage
2N3866
2N4427
collector-emitter saturation voltage
2N3866
2N4427
collector leakage current
2N3866
2N4427
DC current gain
2N3866
2N3866
2N4427
2N4427
transition frequency
collector capacitance
2N3866
2N4427
open emitter; I_C = 100 µA
open base; I_C = 5 mA
R_BE = 10 Ω; I_C = 5 mA
open collector; I_E = 100 µA
I_C = 100 mA; I_B = 20 mA
open base; V_CE = 28 V
open base; V_CE = 12 V
I_C = 50 mA; V_CE = 5 V
I_C = 360 mA; V_CE = 5 V
I_C = 100 mA; V_CE = 5 V
I_C = 360 mA; V_CE = 5 V
I_C = 50 mA; V_CE = 15 V; f = 200 MHz
V_CB = 28 V; I_E = I_e = 0; f = 1 MHz
V_CB = 12 V; I_E = I_e = 0; f = 1 MHz
MIN. MAX. UNIT
55
−
V
40
−
V
30
−
V
20
−
V
55
−
V
40
−
V
3.5 −
V
2
−
V
−
1
V
−
0.5 V
−
20
µA
−
20
µA
10
200
5
−
10
200
5
−
500 −
MHz
−
3
pF
−
4
pF
APPLICATION INFORMATION
Table 1 RF performance at T_mb = 25 °C.
TYPE
f
V_CE
P_o
G_p
I_C
η
NUMBER
(MHz)
(V)
(W)
(dB)
(mA)
(%)
2N3866
100
28
1.8
>10
<107
>60
250
28
1.5
>10
<107
>50
400
28
1.0
>10
<79
>45
2N4427
175
12
1.0
>10
<167
>50
470
12
0.4
>10
67
50
1995 Oct 27
5