2N3866 Datasheet, PDF (2/9 Pages) NXP Semiconductors – Silicon planar epitaxial overlay transistors

Philips Semiconductors
Silicon planar epitaxial
overlay transistors
Product specification
2N3866; 2N4427
DESCRIPTION
NPN overlay transistors in TO-39 metal packages with the
collector connected to the case. The devices are primarily
intended for class-A, B or C amplifiers, frequency multiplier
and oscillator circuits.
APPLICATIONS
• The transistors are intended for use in output, driver or
pre-driver stages in VHF and UHF equipment.
PINNING - TO-39/1
PIN
DESCRIPTION
1
emitter
2
base
3
collector
handbook, halfpage
1
2
MBB199
3
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
V_CER
V_CEO
V_EBO
I_C
I_C(AV)
PARAMETER
collector-emitter voltage
2N3866
2N4427
collector-emitter voltage
2N3866
2N4427
emitter-base voltage
2N3866
2N4427
collector current (DC)
average collector current
P_tot
total power dissipation
f_T
transition frequency
T_j
junction temperature
RF performance
TYPE NUMBER
2N3866
2N4427
f
(MHz)
400
175
CONDITIONS
R_BE = 10 Ω
open base
open collector
measured over any 20 ms
period
up to T_mb = 25 °C
I_C = 50 mA; V_CE = 15 V;
f = 200 MHz
V_CE
P_o
(V)
(W)
28
1
12
1
MIN.
MAX.
UNIT
−
55
V
−
40
V
−
30
V
−
20
V
−
3.5
V
−
2.0
V
−
0.4
A
−
0.4
A
−
3.5
500
−
W
MHz
−
200
°C
G_p
η
(dB)
(%)
>10
>45
>10
>50
1995 Oct 27
2