2N3866 Datasheet, PDF (3/9 Pages) NXP Semiconductors – Silicon planar epitaxial overlay transistors

Philips Semiconductors
Silicon planar epitaxial
overlay transistors
Product specification
2N3866; 2N4427
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CER
V_CEO
V_EBO
I_C
I_C(AV)
I_CM
P_tot
T_stg
T_j
collector-base voltage
2N3866
2N4427
collector-emitter voltage
2N3866
2N4427
collector-emitter voltage
2N3866
2N4427
emitter-base voltage
2N3866
2N4427
collector current (DC)
average collector current
collector current peak value
total power dissipation
storage temperature
junction temperature
open emitter
R_BE = 10 Ω
open base
open collector
measured over any 20 ms
period
up to T_mb = 25 °C
MIN.
MAX.
UNIT
−
55
V
−
40
V
−
55
V
−
40
V
−
30
V
−
20
V
−
3.5
V
−
2.0
V
−
0.4
A
−
0.4
A
−
0.4
A
−
3.5
W
−65
+200
°C
−
200
°C
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-a}
R_{th j-mb}
R_{th mb-h}
PARAMETER
thermal resistance from junction
to ambient in free air
thermal resistance from junction
to mounting base
thermal resistance from
mounting base to heatsink
note 1
note 2
CONDITIONS
VALUE
200
50
1.0
2.5
Notes
1. Mounted with top clamping washer 56218.
2. Mounted with top clamping washer 56218 and a boron nitride washer for electrical insulation.
UNIT
K/W
K/W
K/W
K/W
1995 Oct 27
3