|
TDA6106Q Datasheet, PDF (4/12 Pages) NXP Semiconductors – Video output amplifier | |||
|
◁ |
Philips Semiconductors
Video output ampliï¬er
Product speciï¬cation
TDA6106Q
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see âHandling MOS Devicesâ ).
QUALITY SPECIFICATION
Quality specification âSNW-FQ-611 part Eâ is applicable, except for ESD Human body model see Chapter âLimiting
valuesâ, and can be found in the âQuality reference handbookâ (ordering number 9397 750 00192).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER(1)
Rth j-a
Rth j-c
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
Note
1. External heatsink not required.
VALUE
56
12
UNIT
K/W
K/W
CHARACTERISTICS
Operating range: Tamb = â20 to +65 °C; VDD = 180 to 210 V (see note 1), Vom = 1.4 to 6 V.
Test conditions: Tamb = 25 °C; VDD = 200 V; Vom = 4 V; CL = 10 pF (CL consists of parasitic and cathode capacitance);
measured in test circuit of Fig.5; unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
IDD
Ibias
Vint
Iom(os)
âVTint
quiescent voltage supply current
input bias current (pin 3)
internal reference voltage input stage
offset current of black current
measurement output
temperature drift of internal
reference voltage input stage
VocDC = 100 V
VocDC = 100 V
VocDC = 100 V
Ioc = 0 µA;
Vin = 1.5 to +3.5 V;
Vom = 1.4 to 6 V
VocDC = 100 V
â-â----II-o-o--m-c--
Iof(max)
Voc(min)
Voc(max)
GB
BWS
BWL
linearity of current transfer
maximum peak output current (pin 9)
minimum output voltage (pin 8)
maximum output voltage (pin 8)
gain bandwidth product of open-loop
gain Vos/Vi, dm
small signal bandwidth
large signal bandwidth
Ioc = â10 µA to 3 mA;
Vin = 1.5 to +3.5 V;
Vom = 1.4 to 6 V
Voc = 20 V to VDD â30 V
Vin = 3.5 V
Vin = 1.5 V
f = 500 kHz;
VocDC = 100 V
VocAC = 60 V (p-p);
VocDC = 100 V
VocAC = 100 V (p-p);
VocDC = 100 V
MIN.
2.8
0
â
â10
TYP.
3.0
â
2.5
0
MAX. UNIT
3.3 mA
20
µA
â
V
+10 µA
â
0.5
â
mV/K
0.9
1.0
1.1
â
â
VDD â 14
â
25
â
7
12
VDD â 10 â
0.52
â
5
6
â
4.7
5.7
â
mA
V
V
GHz
MHz
MHz
1997 Mar 03
4
|
▷ |