SA57026 Datasheet, PDF (4/8 Pages) NXP Semiconductors – 300 mA LDO with ON/OFF control and independent delayed RESET function

Philips Semiconductors
300 mA LDO with ON/OFF control and
independent delayed RESET function
Product data
SA57026
ELECTRICAL CHARACTERISTICS
T_amb = 25 °C; V_ON/OFF = 1.6 V, unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_ccq1
I_ccq2
I_ccq3
Regulator
No-load input current 1
No-load input current 2
Input current (OFF)
V_IN = 5 V; I_OUT = 0 mA
V_IN = 4 V; I_OUT = 0 mA
V_IN = 5 V; V_ON/OFF = 0.4 V
V_OUT
Output voltage
V_IN = 5 V; I_OUT = 30 mA
SA57026D
SA57025F
V_IO
V1
V2
∆V_OUT/∆T
Input/output differential voltage
Line regulation
Load regulation
V_OUT Temperature coefficient
(Note 1)
V_IN = 3.2 V; I_OUT = 150 mA
V_IN = 4.4 to 5.5 V; I_OUT = 30 mA
V_IN = 5 V; I_OUT = 0 to 300 mA
T_j = –20 to +85 °C; V_IN = 5 V
RR
V_n
I_ON
V_th(H)
V_th(L)
Reset
Ripple rejection (Note 1)
Output noise voltage (Note 1)
ON/OFF terminal current
HIGH threshold voltage
LOW threshold voltage
V_IN = 5 V; f = 120 Hz; V_ripple = 1 V_p–p;
I_OUT = 30 mA
V_IN = 5 V; f = 20 to 80 kHz;
V_ripple = 1 V_p–p; I_OUT = 30 mA
V_ON/OFF = 1.6 V
V_DET
Detection voltage
V_IN = HIGH-to-LOW
SA57026D
SA57025F
∆V_S/∆T
∆V_S
V_OL
I_LO
I_OL1
I_OL2
t_PLH
V_S temperature coefficient (Note 1)
Hysteresis voltage
LOW-level output voltage
Output leakage current
LOW-level output current 1
LOW-level output current 2 (Note 1)
LOW-to-HIGH transmission delay
time (Note 1)
T_j = –20 to +85 °C
V_IN = HIGH-to-LOW-to-HIGH
V_IN = 3.9 V; R_L = 4.7 kΩ
V_IN = 5 V
V_IN = 3.9 V; R_L = 0 Ω
V_IN = 3.9 V; R_L = 0 Ω;
T_amb = –20 to +80 °C
Cd = 0.0 µF
t_PLH1
t_PHL
Reset delay time
HIGH-to-LOW transmission delay
time (Note 1)
V_IN = 4 V to 5 V; Cd = 0.1 µF
V_OPL
Threshold operating voltage
NOTE:
1. The parameter is guaranteed by design.
V_OL = 0.4 V
MIN.
–
–
–
3.25
3.25
–
–
–
–
–
–
–
1.6
–0.3
4.11
3.81
–
100
–
–
5
3
–
5
–
–
TYP.
3
4
250
MAX.
8
–
–
UNIT
mA
mA
µA
3.30
3.35
V
3.30
3.35
V
0.15
0.3
V
10
20
mV
20
120
mV
100
–
ppm/°C
50
80
dB
40
120
µV_rms
5
10
µA
–
V_IN+0.3
V
–
0.4
V
4.20
4.29
V
3.90
3.99
V
100
–
ppm/°C
–
200
mV
100
200
mV
–
±0.1
µA
–
–
mA
–
–
mA
30
90
µs
10
20
ms
30
90
µs
0.65
0.85
V
2003 Oct 13
4