PZTA64 Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP Darlington transistor

Philips Semiconductors
PNP Darlington transistor
Product specification
PZTA64
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_CES
I_EBO
h_FE
V_CEsat
V_BEon
f_T
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter voltage
transition frequency
I_E = 0; V_CB = −30 V
V_BE = 0; V_CE = −30 V
I_C = 0; V_EB = −10 V
V_CE = −5 V; see Fig.2
I_C = −10 mA
I_C = −100 mA
I_C = −100 mA; I_B = −0.1 mA
I_C = −100 mA; V_CE = −5 V
I_C = −10 mA; V_CE = −5 V; f = 100 MHz
−
−
−
10 000
20 000
−
−
125
MAX.
−100
−100
−100
UNIT
nA
nA
nA
−
−
−1.5
V
−2
V
−
MHz
100000
handbook, full pagewidth
hFE
80000
60000
40000
20000
0
−1
V_CE = −2 V.
MGD836
−10
−10²
−10³
IC (mA)
Fig.2 DC current gain; typical values.
1997 Jun 20
4