PZTA64 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP Darlington transistor

Philips Semiconductors
PNP Darlington transistor
Product specification
PZTA64
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V).
APPLICATIONS
• Preamplifiers requiring high input impedance.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
DESCRIPTION
PNP Darlington transistor in a SOT223 plastic package.
NPN complement: PZTA14.
handbook, halfpage
4
1
2, 4
TR1
TR2
1
2
3
Top view
3
MAM320
Fig.1 Simplified outline (SOT223) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CES
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
CONDITIONS
open emitter
V_BE = 0
T_amb ≤ 25 °C
I_C = −10 mA; V_CE = −5 V
I_C = −10 mA; V_CE = −5 V; f = 100 MHz
MIN.
−
−
−
−
10 000
125
MAX.
−30
−30
−500
1.25
−
−
UNIT
V
V
mA
W
MHz
1997 Jun 20
2