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PZTA64 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP Darlington transistor | |||
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Philips Semiconductors
PNP Darlington transistor
Product speciï¬cation
PZTA64
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
VBE = 0
open collector
Tamb ⤠25 °C; note 1
MIN.
â
â
â
â
â
â
â
â65
â
â65
MAX.
â30
â30
â10
â500
â800
â200
1.25
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see âThermal considerations for SOT223 in the General part of handbook SC04â.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
100
K/W
19
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see âThermal considerations for SOT223 in the General part of handbook SC04â.
1997 Jun 20
3
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