PTC4001T Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
PTC4001T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-mb}
thermal resistance from junction to mounting base
CONDITIONS
T_j = 75 °C
MAX.
22
UNIT
K/W
CHARACTERISTICS
T_mb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CER
collector cut-off current
emitter cut-off current
collector-base breakdown voltage
collector-emitter breakdown voltage
CONDITIONS
V_CB = 24 V; I_E = 0
V_EB = 1.5 V; I_C = 0
I_C = 500 µA; I_E = 0
I_C = 2.5 mA; R_BE = 70 Ω
MIN.
−
−
40
35
MAX.
100
0.75
−
−
UNIT
µA
µA
V
V
APPLICATION INFORMATION
Microwave performance up to T_h = 25 °C in a common collector test circuit and working in CW class A.
MODE OF
OPERATION
f
(GHz)
V_CC
(V)
P_L
(mW)
I_C
(mA)
class A (CW)
2.88 to 3; note 1
20
550 to 750
200
Note
1. Oscillating frequency should stabilize in this frequency range.
1997 Feb 18
4