PTC4001T Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
PTC4001T
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_CER
V_EBO
I_C
P_tot
T_stg
T_j
T_sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
average collector current
total power dissipation
storage temperature
operating junction temperature
soldering temperature
Note
1. At 0.1 mm from case.
CONDITIONS
open emitter
open base
R_BE = 70 Ω
open collector
T_mb = 75 °C
t < 10 s; note 1
MIN.
−
−
−
−
−
−
−65
−
−
MAX.
40
16
35
3
0.25
4
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
handbook, ⁵
Ptot _max
(W)
4
3
2
1
0
0
MGD975
50
100
150
200
Tmb (°C)
Fig.2 Power derating curve as a function of
mounting base temperature.
handbook, h¹alfpage
IC
(A)
0.22
10^−1
0.08
MGA028
(1)
(2)
10^−2
1
10 16
10²
VCE (V)
T_mb = 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided R_BE < 250 Ω.
Fig.3 DC SOAR.
1997 Feb 18
3