PTC4001T Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
PTC4001T
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good characteristics stability and
excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
Common collector oscillator circuits
under CW conditions in military and
professional applications up to
5 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave transistor in a SOT440A
metal ceramic flange package with
collector connected to flange.
QUICK REFERENCE DATA
Microwave performance up to T_h = 25 °C in an oscillator circuit up to 3 GHz.
MODE OF
OPERATION
f
(GHz)
V_CC
P_L
I_C
(V)
(mW)
(mA)
class A (CW)
2.88 to 3; note 1
20
≥550
200
Note
1. Oscillating frequency should stabilize in this range.
PINNING - SOT440A
PIN
DESCRIPTION
1
base
2
emitter
3
collector connected to flange
handbook, 4 columns
1
2
Top view
c
b
3
e
MAM131
Marking code: 440.
Fig.1 Simplified outline and symbol.
1997 Feb 18
2