PTB23002U Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
PTB23002U
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-mb}
R_{th mb-h}
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
T_j = 75 °C
note 1
Note
1. See “Mounting recommendations in the General part of handbook SC19a”.
MAX.
22
0.7
UNIT
K/W
K/W
CHARACTERISTICS
T_mb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CBO
V_(BR)CES
I_CBO
I_EBO
collector-base breakdown voltage I_C = 1 mA; I_E = 0
collector-emitter breakdown voltage I_C = 1 mA; R_BE = 0 Ω
collector cut-off current
V_CE = 30 V; I_E = 0
emitter cut-off current
V_EB = 1.5 V; I_C = 0
MIN.
40
40
−
−
MAX.
−
−
15
1.5
UNIT
V
V
µA
µA
APPLICATION INFORMATION
Microwave performance up to T_mb = 25 °C in a common-base test circuit as shown in Fig.4 and working in
CW class C mode.
MODE OF
OPERATION
f
(GHz)
Class C 2.3
(CW)
V_CC
(V)
28
P_L
(W)
≥2;
typ. 2.3
G_p
(dB)
≥9;
typ. 9.6
η_C
(%)
≥45;
typ. 50
Z_i; Z_L
(Ω)
see Figs 5 and 6
List of components (see Fig.4)
COMPONENT
L1, L2
C1
C2
C3
DESCRIPTION
VALUE
3 turns 0.5 mm diameter copper wire
feedthrough bypass capacitor
DC blocking capacitor
100 pF
tuning capacitor
0.5 - 5 pF
DIMENSIONS
int.dia. = 2 mm
CATALOGUE NO.
Erie, ref.1250-003
Tekelec 5855
1997 Feb 19
4