PTB23002U Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
PTB23002U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
T_sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
open base
R_BE = 0 Ω
open collector
T_mb = 75 °C
t ≤ 10 s; note 1
Note
1. Up to 0.2 mm from ceramic.
MIN.
−
−
−
−
−
−
−65
−
−
MAX.
40
15
40
3
0.25
5
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
handbook, h⁸alfpage
Ptot
(W)
6
MGA243
4
2
0
−50
0
50 100 150 200 250
Tmb (^oC)
P_{tot max} = 5 W.
Fig.2 Maximum power dissipation derating as a
function of mounting base temperature.
3
handbook, halfpage
PL
(W)
2
MGA244
1
0
0
100
200
300
400
Pi (mW)
Fig.3 Output power as a function of input power.
1997 Feb 19
3