PTB23002U Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
PTB23002U
FEATURES
• Very high power gain
• Internal input prematching network
• Diffused emitter ballasting resistors
improve ruggedness
• Interdigitated emitter-base
structure
• Gold metallization with barrier layer
to prevent electromigration and
gold diffusion during life
• Multicell geometry improves power
sharing and reduces thermal
resistance.
APPLICATIONS
Common-base, class C power
amplifiers at frequencies up to
2.3 GHz.
QUICK REFERENCE DATA
Microwave performance up to T_mb = 25 °C in a common-base class C
narrowband amplifier.
MODE OF
OPERATION
Class C (CW)
f
V_CC
P_L
(GHz) (V) (W)
2.3
28 >2
G_p
(dB)
>9
η_C
Z_i; Z_L
(%)
(Ω)
>45 see Figs 5
and 6
PINNING - SOT440A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
handbook, 4 columns
1
c
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT440A hermetically sealed metal
ceramic flange package, with base
connected to flange.
b
3
e
2
Top view
MAM131
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2