PSMN025-100D Datasheet, PDF (4/9 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PSMN025-100D
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175
Mounting Base temperature, Tmb (C)
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); V_GS ≥ 10 V
1000 ^{Peak Pulsed Drain Current, IDM (A)}
RDS(on) = VDS/ ID
100
10
D.C.
1
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.1
1
10
100
Drain-Source Voltage, VDS (V)
1000
Fig.3. Safe operating area
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
1 ^{Transient thermal impedance, Zth j-mb (K/W)}
D = 0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
single pulse
P
D
D = tp/T
tp
0.001
1E-06
1E-05
T
1E-04 1E-03 1E-02
Pulse width, tp (s)
1E-01
1E+00
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
40 ^{Drain Current, ID (A)}
VGS = 10V
35
8V
6V
30
Tj = 25 C
25
20
5V
15
4.8 V
10
5
0
0
4.6 V
4.4 V
4V
4.2 V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS)
Drain-Source On Resistance, RDS(on) (Ohms)
0.16
4.2 V
4.4 V 4.6 V
4.8 V
0.14 4 V
Tj = 25 C
0.12
0.1
5V
0.08
0.06
0.04
8 V 6V
0.02
VGS = 10V
0
0 2 4 6 8 10 12 14 16 18 20
Drain Current, ID (A)
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D)
August 1999
4
Rev 1.000