PSMN025-100D Datasheet, PDF (1/9 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
PSMN025-100D
FEATURES
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
V_DSS = 100 V
I_D = 47 A
R_DS(ON) ≤ 25 mΩ
GENERAL DESCRIPTION
SiliconMAX products use the latest
Philips Trench technology to
achieve the lowest possible
on-state resistance in each
package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN025-100D is supplied in
the SOT428 (Dpak) surface
mounting package.
PINNING
PIN
DESCRIPTION
1 gate
2 drain¹
3 source
tab drain
SOT428 (DPAK)
tab
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
P_D
T_j, T_stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
T_j = 25 ˚C to 175˚C
T_j = 25 ˚C to 175˚C; R_GS = 20 kΩ
T_mb = 25 ˚C; V_GS = 10 V
T_mb = 100 ˚C; V_GS = 10 V
T_mb = 25 ˚C
T_mb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
± 20
47
33
188
150
175
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin 2 of the SOT428 package.
August 1999
1
Rev 1.000