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PMEG3010ESB_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – 30 V, 1 A low VF MEGA Schottky barrier rectifier
NXP Semiconductors
PMEG3010ESB
30 V, 1 A low VF MEGA Schottky barrier rectifier
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
10
0.02
0.01
0
aaa-016800
1
10-3
10-2
10-1
1
FR4 PCB, standard footprint
10
102
103
tp (s)
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
aaa-016801
Zth(j-a)
(K/W)
102
10
duty cycle =
1
0.75
0.5
0.33
0.25 0.2
0.1
0.05
0.02
0
0.01
1
10-3
10-2
10-1
1
10
FR4 PCB, mounting pad for anode and cathode 1 cm2 each
102
103
tp (s)
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3010ESB
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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