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PMEG3010ESB_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – 30 V, 1 A low VF MEGA Schottky barrier rectifier
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NXP Semiconductors
PMEG3010ESB
30 V, 1 A low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VR
reverse voltage
Tj = 25 °C
IF
forward current
Tsp ≤ 135 °C; δ = 1
IF(AV)
average forward current
δ = 0.5; f = 20 kHz; Tamb ≤ 105 °C;
[1]
square wave
δ = 0.5; f = 20 kHz; Tsp ≤ 140 °C;
square wave
IFRM
repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25
IFSM
non-repetitive peak forward
tp = 8 ms; Tj(init) = 25 °C; square wave
current
Ptot
total power dissipation
Tamb ≤ 25 °C
[2]
[3]
[1]
Tj
junction temperature
Tamb
ambient temperature
Tstg
storage temperature
Min Max Unit
-
30
V
-
1.4 A
-
1
A
-
1
A
-
4
A
-
10
A
-
0.525 W
-
1
W
-
1.78 W
-
150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
1 cm2 each.
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1][2] -
-
240 K/W
[1][3] -
-
125 K/W
[1][4] -
-
70
K/W
[5]
-
-
15
K/W
PMEG3010ESB
Product data sheet
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
1 cm2 each.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Soldering point of anode tab.
All information provided in this document is subject to legal disclaimers.
1 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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