PMEG3010ESB_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 30 V, 1 A low VF MEGA Schottky barrier rectifier

PMEG3010ESB
30 V, 1 A low VF MEGA Schottky barrier rectifier
1 July 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)
Surface-Mounted Device (SMD) package.
2. Features and benefits
• Average forward current: I_F(AV) ≤ 1 A
• Reverse voltage: V_R ≤ 30 V
• Low forward voltage, typical: V_F = 495 mV
• Low reverse current, typical: I_R = 12 µA
• Package height typ. 270 µm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Low power consumption applications
• Ultra high-speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I_F(AV)
V_R
V_F
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
I_R
reverse current
Conditions
δ = 0.5; f = 20 kHz; T_sp ≤ 140 °C;
square wave
T_j = 25 °C
I_F = 1 A; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C
V_R = 10 V; t_p ≤ 3 ms; δ ≤ 0.3; T_j = 25 °C
V_R = 30 V; t_p ≤ 3 ms; δ ≤ 0.3; T_j = 25 °C
Min Typ Max Unit
-
-
1
A
-
-
30
V
-
495 565 mV
-
1.6 5
µA
-
12
45
µA
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