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PMEG2010EA Datasheet, PDF (4/7 Pages) NXP Semiconductors – Low VF (MEGA) Schottky barrier diode
Philips Semiconductors
Low VF (MEGA) Schottky barrier diode
Product specification
PMEG2010EA
GRAPHICAL DATA
103
handbook, halfpage
IF
(mA)
102
(1) (2)
(3)
10
MHC311
1
10−1
0
0.2
0.4
0.6
VF (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
105
handbook, halfpage
IR
(µA)
104
103
102
10
MHC312
(1)
(2)
(3)
1
0
5
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
10
15
20
25
VR (V)
Fig.3 Reverse current as a function of reverse
voltage; typical values.
handbook,8h0alfpage
Cd
(pF)
60
MHC313
40
20
0
0
5
10
15
20
VR (V)
Tamb = 25 °C; f = 1 MHz.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2004 Feb 06
4