PMEG2010EA Datasheet, PDF (2/7 Pages) NXP Semiconductors – Low VF (MEGA) Schottky barrier diode

Philips Semiconductors
Low V_F (MEGA) Schottky barrier diode
Product specification
PMEG2010EA
FEATURES
• Forward current: 1 A
• Reverse voltage: 20 V
• Ultra high-speed switching
• Very low forward voltage
• Very small plastic SMD package.
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits.
olumns
1
2
MGU328
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very
small SMD plastic package.
Marking code: E1.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
ORDERING INFORMATION
TYPE
NUMBER
PMEG2010EA
NAME
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
V_R
I_F
I_FSM
T_stg
T_j
T_amb
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t_p = 8.3 ms half sinewave;
JEDEC method
MIN.
−
−
−
MAX.
20
1
5
UNIT
V
A
A
−65
+150 °C
−
125
°C
−65
+125 °C
2004 Feb 06
2