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| PMEG2010EA Datasheet, PDF (3/7 Pages) NXP Semiconductors – Low VF (MEGA) Schottky barrier diode | |||
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Philips Semiconductors
Low VF (MEGA) Schottky barrier diode
Product speciï¬cation
PMEG2010EA
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
VF
continuous forward voltage
IR
continuous reverse current
Cd
diode capacitance
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
CONDITIONS
TYP.
see Fig.2; note 1
IF = 10 mA
240
IF = 100 mA
300
IF = 1000 mA
480
see Fig.3; note 1
VR = 5 V
5
VR = 8 V
7
VR = 15 V
10
VR = 5 V; f = 1 MHz; see Fig.4 19
MAX. UNIT
270
mV
350
mV
550
mV
10
µA
20
µA
50
µA
25
pF
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
Notes
1. Device mounted on an FR4 printed-circuit board with Cu clad 10 x 10 mm.
2. Device mounted on an FR4 printed-circuit board with Cu clad 40 x 40 mm.
VALUE
220
180
UNIT
K/W
K/W
2004 Feb 06
3
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