PMEG2005EB_15 Datasheet, PDF (4/7 Pages) NXP Semiconductors – Low VF MEGA Schottky barrier diode

NXP Semiconductors
Low V_F MEGA Schottky barrier diode
Product data sheet
PMEG2005EB
GRAPHICAL DATA
10³
handbook, halfpage
IF
(mA)
10²
(1) (2)
(3)
10
MHC456
1
10^−1
10^−2
0
0.1
0.2
0.3
0.4
0.5
VF (V)
(1) T_amb = 125 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
10⁴
handbook, halfpage
IR
(1)
(μA)
10³
(2)
10²
MHC457
10
(3)
1
0
10
(1) T_amb = 125 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
20
30
VR (V)
Fig.3 Reverse current as a function of reverse
voltage; typical values.
50
handboo_Ck,_dhalfpage
(pF)
40
30
20
10
0
0
5
MHC458
10
15
20
VR (V)
f = 1 MHz; T_amb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2003 Apr 04
4