PMEG2005EB_15 Datasheet, PDF (2/7 Pages) NXP Semiconductors – Low VF MEGA Schottky barrier diode

NXP Semiconductors
Low V_F MEGA Schottky barrier diode
Product data sheet
PMEG2005EB
FEATURES
• Forward current: 0.5 A
• Reverse voltage: 20 V
• Very low forward voltage
• Guard ring protected
• Ultra small SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Low current rectification
• Low power consumption applications (e.g. handheld
devices).
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode, encapsulated in a SOD523
(SC-79) ultra small SMD plastic package.
PINNING
PIN
1
2
;handbook, halfpage k
Top view
DESCRIPTION
cathode
anode
a
MAM403
Marking code: L5.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523; SC-79) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_R
I_F
I_FRM
I_FSM
T_stg
T_j
T_amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
t_p = 1 ms; δ ≤ 0.25
t = 8 ms square wave
MIN.
−
−
−
−
−65
−
−65
MAX.
20
500
3.5
6
+150
125
+125
UNIT
V
mA
A
A
°C
°C
°C
2003 Apr 04
2