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| PMEG2005EB_15 Datasheet, PDF (3/7 Pages) NXP Semiconductors – Low VF MEGA Schottky barrier diode | |||
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NXP Semiconductors
Low VF MEGA Schottky barrier diode
Product data sheet
PMEG2005EB
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF
continuous forward voltage
IR
continuous reverse current
Cd
diode capacitance
Note
1. Pulsed test: tp = 300 μs; δ = 0.02.
CONDITIONS
TYP.
see Fig.2
IF = 0.1 mA
120
IF = 1 mA
180
IF = 10 mA
245
IF = 100 mA
320
IF = 500 mA
430
VR = 10 V; see Fig.3; note 1 7
VR = 1 V; f = 1 MHz; see Fig.4 24
MAX.
180
240
290
380
480
30
30
UNIT
mV
mV
mV
mV
mV
μA
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to
ambient
note 1
Note
1. Refer to SOD523 (SC-79) standard mounting conditions.
CONDITIONS
VALUE
400
UNIT
K/W
2003 Apr 04
3
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