PMEG1020EA Datasheet, PDF (4/8 Pages) NXP Semiconductors – Ultra low VFMEGA Schottky barrier diode

Philips Semiconductors
Ultra low V_F MEGA Schottky barrier diode
Preliminary specification
PMEG1020EA
GRAPHICAL DATA
10⁴
handbook, halfpage
IF
(mA)
10³
(1)
(2)
(3)
10²
MDB194
10
1
0
100
200
300
400
500
VF _(mV)
(1) T_amb = 85 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
10⁵
handb_Io_Rok, halfpage
(µA)
(1)
10⁴
10³
(2)
10²
MDB195
10
(3)
1
0
2
4
6
8
10
VR (V)
(1) T_amb = 85 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
120
handb_Co_dok, halfpage
(pF)
100
MDB196
80
60
40
20
0
2
4
6
8
10
VR (V)
f = 1 MHz; T_amb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2003 Mar 07
4