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| PMEG1020EA Datasheet, PDF (3/8 Pages) NXP Semiconductors – Ultra low VFMEGA Schottky barrier diode | |||
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Philips Semiconductors
Ultra low VF MEGA Schottky barrier diode
Preliminary speciï¬cation
PMEG1020EA
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
CONDITIONS
TYP.
see Fig.2; note 1
IF = 0.01 A
100
IF = 0.1 A
170
IF = 1 A
280
IF = 2 A
350
see Fig.3; note 2
VR = 5 V
0.7
VR = 8 V
1
VR = 10 V
1.2
VR = 5 V; f = 1 MHz; see Fig.4 37
MAX. UNIT
130
mV
200
mV
350
mV
460
mV
2
mA
2.5
mA
3
mA
45
pF
Notes
1. Pulse test: tp = 300 µs; δ = 0.02.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
(PR) are a significant part of the total power losses.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to solder point
note 1
note 2
note 3
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board with copper clad 10 x 10 mm.
3. Solder point of cathode tab.
VALUE
450
210
90
UNIT
K/W
K/W
K/W
2003 Mar 07
3
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