PMEG1020EA Datasheet, PDF (2/8 Pages) NXP Semiconductors – Ultra low VFMEGA Schottky barrier diode

Philips Semiconductors
Ultra low V_F MEGA Schottky barrier diode
Preliminary specification
PMEG1020EA
FEATURES
• Forward current: 2 A
• Reverse voltage: 10 V
• Ultra low forward voltage
• Very small plastic SMD package.
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
APPLICATIONS
• Low voltage rectification
• High efficiency DC/DC conversion
• Switch mode power supply
• Inverse polarity protection
• Low power consumption applications.
olumns
1k
2_a
MAM283
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very
small SMD plastic package.
Marking code: E2.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_R
I_F
I_FRM
I_FSM
T_stg
T_j
T_amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
T_sp ≤ 55 °C
t_p ≤ 1 ms; δ ≤ 0.5
t_p = 8 ms square wave
MIN.
−
−
−
−
−65
−
−65
MAX.
10
2
3.2
9
+150
150
+150
UNIT
V
A
A
A
°C
°C
°C
2003 Mar 07
2