PMBFJ108 Datasheet, PDF (4/6 Pages) NXP Semiconductors – N-channel junction FETs

Philips Semiconductors
N-channel junction FETs
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
DYNAMIC CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
C_is
PARAMETER
input capacitance
C_is
input capacitance
C_rs
feedback capacitance
CONDITIONS
V_DS = 0
−V_GS = 10 V
f = 1 MHz
V_DS = 0
−V_GS = 0
f = 1 MHz
T_amb = 25 °C
V_DS = 0
−V_GS = 10 V
f = 1 MHz
Switching times (see Fig.2)
t_d
delay time
t_on
turn-on time
t_s
storage time
t_off
turn-off time
note 1
note 1
note 1
note 1
Notes
1. Test conditions for switching times are as follows:
V_DD = 1.5 V, V_GS = 0 to −V_GS(off) (all types);
−V_GS(off) = 12 V, R_L = 100 Ω (PMBFJ108);
−V_GS(off) = 7 V, R_L = 100 Ω (PMBFJ109);
−V_GS(off) = 5 V, R_L = 100 Ω (PMBFJ110).
TYP.
15
MAX. UNIT
30 pF
50
85 pF
8
15 pF
2
− ns
4
− ns
4
− ns
6
− ns
k, halfpage
VDD
10 nF
50 Ω
10 µF
50 Ω
0.1 µF
RL
DUT
SAMPLING
SCOPE
50 Ω
MBK295
VGS = 0 V
Vi
−VGS _off
10%
90%
90%
Vo
10%
toff
ts
tf
ton
td
tr
MBK294
Fig.2 Switching circuit.
Fig.3 Input and output waveforms.
April 1995
4