PMBFJ108 Datasheet, PDF (2/6 Pages) NXP Semiconductors – N-channel junction FETs

Philips Semiconductors
N-channel junction FETs
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
FEATURES
• High-speed switching
• Interchangeability of drain and
source connections
• Low R_DSon at zero gate voltage
( < 8 Ω for PMBFJ108).
DESCRIPTION
Symmetrical N-channel junction
FETs in a SOT23 envelope. Intended
for use in applications such as analog
switches, choppers and commutators
and in audio amplifiers.
handbook, halfpage
3
1
2
Top view
d
g
s
MAM385
PINNING - SOT23
PIN
DESCRIPTION
1 drain
2 source
3 gate
Note
1. Drain and source are
interchangeable.
Fig.1 Simplified outline and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_DS
V_GSO
V_GDO
I_G
drain-source voltage
gate-source voltage
drain-drain voltage
forward gate current
(DC)
P_tot
total power dissipation
T_stg
storage temperature
T_j
operating junction
temperature
CONDITIONS MIN. MAX. UNIT
−
±25 V
−
−25 V
−
−25 V
50 mA
T_amb = 25°C;
note 1
−
250 mW
−65 150 °C
−
150 °C
April 1995
2