PMBFJ108 Datasheet, PDF (3/6 Pages) NXP Semiconductors – N-channel junction FETs

Philips Semiconductors
N-channel junction FETs
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
THERMAL RESISTANCE
SYMBOL
PARAMETER
R_{th j-a}
from junction to ambient (note 1)
Notes
1. Mounted on an FR-4 printboard.
VALUE
500
UNIT
K/W
STATIC CHARACTERISTICS
T_j = 25 °C.
SYMBOL
PARAMETER
−I_GSS
reverse gate current
I_DSX
drain-source cut-off current
I_DSS
−V_(BR)GSS
drain current
PMBFJ108
PMBFJ109
PMBFJ110
gate-source breakdown voltage
−V_GS(off)
R_DS(on)
gate-source cut-off voltage
PMBFJ108
PMBFJ109
PMBFJ110
drain-source on-resistance
PMBFJ108
PMBFJ109
PMBFJ110
CONDITIONS
−V_GS = 15 V
V_DS = 0
V_GS = −10 V
V_DS = 5 V
V_GS = 0
V_DS = 15 V
−I_G = 1 µA
V_DS = 0
I_D = 1 µA
V_DS = 5 V
V_GS = 0 V
V_DS = 0.1 V
MIN. MAX. UNIT
−
3 nA
−
3 nA
80
− mA
40
−
10
−
−
25 V
3
10 V
2
6
0.5
4
−
8Ω
−
12
−
18
April 1995
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