PLB16004U Datasheet, PDF (4/12 Pages) NXP Semiconductors – Microwave power transistor

Philips Semiconductors
Microwave power transistor
Product specification
PLB16004U
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-mb}
R_{th mb-h}
thermal resistance from junction to mounting base T_j = 100 °C
thermal resistance from mounting base to heatsink note 1
Note
1. See “Mounting recommendations in the General part of handbook SC19a”.
MAX.
11
0.3
UNIT
K/W
K/W
CHARACTERISTICS
T_mb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CES
V_(BR)CBO
V_(BR)CES
V_(BR)EBO
h_FE
collector cut-off current
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
DC current gain
CONDITIONS
R_BE = 0; V_CE = 30 V
I_C = 1 mA; I_E = 0
I_C = 1 mA; I_E = 0
I_C = 1 mA; I_E = 0
I_C = 300 mA; V_CE = 5 V
MIN.
−
40
40
3
15
MAX.
200
−
−
−
100
UNIT
µA
V
V
V
APPLICATION INFORMATION
Microwave performance up to T_mb = 25 °C in a common-base test circuit as shown in Fig.3.
MODE OF
f
V_CC
P_L
G_p
η_C
OPERATION
(GHz)
(V)
(W)
(dB)
(%)
Class C (CW)
1.6
28
typ. 5
typ. 10
typ. 50
Z_i; Z_L
(Ω)
see Figs 5 and 6
1997 Feb 18
4